APTCV60TLM99T3G

Specifications

Collectoremitter Breakdown Voltage

600V

Configuration

Three Level Inverter - IGBT, FET

Input

Standard

Max Power Dissipation

90W

Max Collector Current

50A

Vceon Max Vge Ic

1.9V @ 15V, 30A

Gateemitter Voltagemax

20V

Collector Emitter Voltage Vceo

1.9V

Pin Sayısı

32

Current Collector Cutoff Max

250μA

Number Of Elements

2

Terminal Pozisyonu

DUAL

Case Connection

ISOLATED

Lifecycle Status

IN PRODUCTION (Last Updated: 1 month ago)

Turn Off Timenom Toff

310 ns

Ntc Thermistor

Yes

Igbt Type

Trench Field Stop

Additional Feature

AVALANCHE ENERGY RATED, ULTRA LOW-ON RESISTANCE

Input Capacitance

1.6nF

Montaj

Chassis Mount, Screw

Nem Hassasiyeti (MSL)

1 (Unlimited)

Pin Sayısı

3

Terminal Formu

UNSPECIFIED

Polaritychannel Type

N-CHANNEL

Turn On Time

170 ns

Montaj Tipi

Chassis Mount

Transistor Application

POWER CONTROL

Çalışma Sıcaklığı

-40°C~175°C TJ

Transistor Element Material

SILICON

Yayın Yılı

2012

Input Capacitance Cies Vce

1.6nF @ 25V

Kılıf / Paket

SP3

Power Max

90W

Parça Durumu

Active

RoHS Durumu

RoHS Compliant

Terminal Sayısı

32

Radyasyon Dayanımı

No