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Priced by quantity and lead time.
Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Yayın Yılı
- 1997
- Rpm
- 1,780 RPM
- Rohs Code
- Yes
- Kılıf / Paket
- SP6
- RoHS
- Details
- Terminal Sayısı
- 7
- RoHS Durumu
- RoHS Compliant
- Parça Durumu
- Active
- Package Body Material
- UNSPECIFIED
- Ihs Manufacturer
- MICROSEMI CORP
- Channel Type
- Dual N
- Operating Temperaturemax
- 150 °C
- Montaj Tipi
- Chassis Mount
- Transistor Application
- SWITCHING
- Fabrika Tedarik Süresi
- 22 Weeks
- Transistor Element Material
- SILICON
- Pulsed Drain Currentmax Idm
- 232 A
- Rise Time
- 13ns
- Drain Currentmax Id
- 56 A
- Temel Ürün No
- APTC80
- ECCN Kodu
- EAR99
- Number Of Terminals
- 7
- Gate Charge Qg Max Vgs
- 364nC @ 10V
- Avalanche Energy Rating Eas
- 670 mJ
- Pin Sayısı
- 7
- Input Capacitance Ciss Max Vds
- 9015pF @ 25V
- Part Life Cycle Code
- Active
- Technology
- MOSFET (Metal Oxide)
- Qualification Status
- Not Qualified
- Terminal Kaplaması
- TIN SILVER COPPER
- Lifecycle Status
- IN PRODUCTION (Last Updated: 1 month ago)
- Montaj
- Chassis Mount, Screw
- Package Description
- FLANGE MOUNT, R-XUFM-X7
- Vgsth Max Id
- 3.9V @ 4mA
- Rds On Max Id Vgs
- 75m Ω @ 28A, 10V
- Configuration
- 2 N-Channel (Half Bridge)
- Operating Mode
- ENHANCEMENT MODE
- Max Power Dissipation
- 568W
- Power Dissipation
- 568W
- JESD-609 Kodu
- e1
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