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Priced by quantity and lead time.
Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Power Max
- 833 W
- Currentcollector Ic Max
- 200 A
- Ürün Durumu
- Active
- Radyasyon Dayanımı
- No
- Gateemitter Thr Voltagemax
- 6.5V
- Paket
- Tube
- Pin Sayısı
- 3
- Fabrika Paket Adedi
- 1
- Polaritychannel Type
- N-CHANNEL
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Number Of Elements
- 1
- Case Connection
- COLLECTOR
- Maximum Gate Emitter Voltage
- - 30 V, + 30 V
- Kurşunsuz Kodu
- yes
- Current Collector Pulsed Icm
- 225A
- Additional Feature
- HIGH RELIABILITY
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Ürün Tipi
- IGBT Transistors
- Collectoremitter Saturation Voltage
- 1.7
- Element Configuration
- Single
- Vceon Max Vge Ic
- 2.1V @ 15V, 75A
- Collector Emitter Voltage Vceo
- 1.2kV
- Ambalaj
- Tube
- RoHS
- Details
- Akım Değeri
- 200A
- Kılıf / Paket
- TO-247-3 Variant
- Giriş Tipi
- Standard
- Kurşunsuz
- Lead Free
- Terminal Sayısı
- 3
- RoHS Durumu
- RoHS Compliant
- Parça Durumu
- Not For New Designs
- Gate Charge
- 425nC
- Transistor Application
- POWER CONTROL
- Turn On Time
- 101 ns
- Montaj Tipi
- Through Hole
- ECCN Kodu
- EAR99
- Temel Ürün No
- APT75GN120
- Transistor Element Material
- SILICON
- Voltage Collector Emitter Breakdown Max
- 1200V
- Td Onoff25c
- 60ns/620ns
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