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Priced by quantity and lead time.
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Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Ürün Tipi
- IGBT Transistors
- Collectoremitter Breakdown Voltage
- 1.2kV
- Element Configuration
- Single
- Min. Çalışma Sıcaklığı
- -55 °C
- Gateemitter Voltagemax
- 30V
- Vceon Max Vge Ic
- 3.2V @ 15V, 70A
- Collector Emitter Voltage Vceo
- 3.2V
- Max Power Dissipation
- 961W
- Tedarikçi Cihaz Paketi
- TO-264
- Max Collector Current
- 160A
- Ambalaj
- Tube
- Td Onoff25c
- 33ns/278ns
- Technology
- Si
- Maximum Gate Emitter Voltage
- - 30 V, + 30 V
- Test Conditions
- 600V, 70A, 4.3 Ω, 15V
- Current Collector Pulsed Icm
- 280A
- Switching Energy
- 3.82mJ (on), 2.58mJ (off)
- Igbt Type
- NPT
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Montaj
- Through Hole
- Lifecycle Status
- Production (Last Updated: 1 month ago)
- Gate Charge
- 544nC
- Montaj Tipi
- Through Hole
- Fabrika Paket Adedi
- 1
- Polaritychannel Type
- N-CHANNEL
- Maks. Çalışma Sıcaklığı
- 150 °C
- Temel Ürün No
- APT70GR120
- Fabrika Tedarik Süresi
- 18 Weeks
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Voltage Collector Emitter Breakdown Max
- 1200V
- RoHS
- Compliant
- Power Max
- 961W
- Kılıf / Paket
- TO-264-3, TO-264AA
- Currentcollector Ic Max
- 160 A
- Giriş Tipi
- Standard
- Yayın Yılı
- 2001
- Kurşunsuz
- Lead Free
- Ürün Durumu
- Active
- Gateemitter Thr Voltagemax
- 6.5V
- Paket
- Tube
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