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Priced by quantity and lead time.
Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Additional Feature
- LOW CONDUCTION LOSS
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Kurşunsuz Kodu
- yes
- Current Collector Pulsed Icm
- 202A
- Number Of Elements
- 1
- Case Connection
- COLLECTOR
- Tepe Reflow Sıcaklığı (°C)
- NOT SPECIFIED
- Ambalaj
- Tube
- Min. Çalışma Sıcaklığı
- -55 °C
- Vceon Max Vge Ic
- 2.5V @ 15V, 40A
- Collector Emitter Voltage Vceo
- 2.5V
- Collectoremitter Saturation Voltage
- 2
- Element Configuration
- Single
- Ürün Tipi
- IGBT Transistors
- Seri
- POWER MOS 8™
- Paket
- Tube
- Ürün Durumu
- Active
- Power Max
- 520W
- Currentcollector Ic Max
- 121 A
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Maks. Çalışma Sıcaklığı
- 150 °C
- Pin Sayısı
- 3
- Polaritychannel Type
- N-CHANNEL
- Fabrika Paket Adedi
- 1
- Continuous Collector Current
- 121
- Turn Off Timenom Toff
- 304 ns
- Lifecycle Status
- Production (Last Updated: 2 months ago)
- Switching Energy
- 715μJ (on), 607μJ (off)
- Igbt Type
- PT
- Montaj
- Through Hole
- Test Conditions
- 400V, 40A, 4.7 Ω, 15V
- Pin Sayısı
- 3
- Terminal Kaplaması
- Tin/Silver/Copper (Sn/Ag/Cu)
- Qualification Status
- Not Qualified
- Td Onoff25c
- 21ns/133ns
- Technology
- Si
- Max Power Dissipation
- 520W
- Power Dissipation
- 520
- Max Collector Current
- 121A
- JESD-609 Kodu
- e1
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