Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Birim Ağırlık
- 1.340411 oz
- Additional Feature
- LOW CONDUCTION LOSS
- Case Connection
- COLLECTOR
- Number Of Elements
- 1
- Current Collector Pulsed Icm
- 250A
- Kurşunsuz Kodu
- yes
- Maximum Gate Emitter Voltage
- - 30 V, + 30 V
- Collector Emitter Voltage Vceo
- 600V
- Vceon Max Vge Ic
- 2.7V @ 15V, 65A
- Ambalaj
- Tube
- Seri
- POWER MOS 7®
- Ürün Tipi
- IGBT Transistors
- Element Configuration
- Single
- Collectoremitter Saturation Voltage
- 2.2
- Radyasyon Dayanımı
- No
- Paket
- Bulk
- Gateemitter Thr Voltagemax
- 6V
- Currentcollector Ic Max
- 198 A
- Power Max
- 833 W
- Ürün Durumu
- Active
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Polaritychannel Type
- N-CHANNEL
- Fabrika Paket Adedi
- 1
- Pin Sayısı
- 3
- Montaj
- Through Hole
- Igbt Type
- PT
- Switching Energy
- 605μJ (on), 895μJ (off)
- Turn Off Timenom Toff
- 220 ns
- Continuous Collector Current
- 198
- Technology
- Si
- Td Onoff25c
- 30ns/90ns
- Terminal Kaplaması
- Tin/Silver/Copper (Sn/Ag/Cu)
- Pin Sayısı
- 3
- Test Conditions
- 400V, 65A, 5 Ω, 15V
- JESD-609 Kodu
- e1
- Max Collector Current
- 198A
- Power Dissipation
- 833
- Max Power Dissipation
- 833W
- Voltage Rated Dc
- 600V
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