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Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Voltage Rated Dc
- 600V
- Collectoremitter Breakdown Voltage
- 600V
- Configuration
- Single
- Max Power Dissipation
- 833W
- Max Collector Current
- 100A
- JESD-609 Kodu
- e1
- Test Conditions
- 400V, 65A, 5 Ω, 15V
- Pin Sayısı
- 3
- Td Onoff25c
- 30ns/91ns
- Terminal Kaplaması
- TIN SILVER COPPER
- Turn Off Timenom Toff
- 219 ns
- Switching Energy
- 605μJ (on), 896μJ (off)
- Igbt Type
- PT
- Montaj
- Through Hole
- Gate Charge
- 210nC
- Pd Power Dissipation
- 833 W
- Transistor Application
- POWER CONTROL
- Turn On Time
- 84 ns
- Montaj Tipi
- Through Hole
- Transistor Element Material
- SILICON
- Maks. Çalışma Sıcaklığı
- + 150 C
- Voltage Collector Emitter Breakdown Max
- 600 V
- Temel Ürün No
- APT65GP60
- Yayın Yılı
- 1999
- Kurşunsuz
- Lead Free
- RoHS
- Details
- Kılıf / Paket
- TO-247-3 Variant
- Akım Değeri
- 100A
- Giriş Tipi
- Standard
- Collector Emitter Voltage Vceo Max
- 600 V
- Terminal Sayısı
- 3
- RoHS Durumu
- RoHS Compliant
- Parça Durumu
- Not For New Designs
- Montaj Stili
- Through Hole
- Collectoremitter Saturation Voltage
- 2.2 V
- Minimum Operating Temperature
- - 55 C
- Element Configuration
- Single
- Seri
- POWER MOS 7®
- Ambalaj
- Tube
- Vceon Max Vge Ic
- 2.7V @ 15V, 65A
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