APT6015B2VFR

Specifications

Pulsed Drain Currentmax Idm

152 A

Package Body Material

PLASTIC/EPOXY

JESD-609 Kodu

e0

Package Style

IN-LINE

Case Connection

DRAIN

Package Shape

RECTANGULAR

Terminal Pozisyonu

SINGLE

Drainsource On Resistancemax

0.15 Ω

Terminal Kaplaması

TIN LEAD

Configuration

SINGLE WITH BUILT-IN DIODE

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Drain Currentmax Id

38 A

Kurşunsuz Kodu

No

Number Of Elements

1

Package Description

TMAX-3

Qualification Status

Not Qualified

Ds Breakdown Voltagemin

600 V

Number Of Terminals

3

Ihs Manufacturer

MICROSEMI CORP

Rohs Code

No

Power Dissipationmax Abs

520 W

Transistor Element Material

SILICON

Additional Feature

AVALANCHE RATED

Polaritychannel Type

N-CHANNEL

Avalanche Energy Rating Eas

2500 mJ

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Operating Mode

ENHANCEMENT MODE

Terminal Formu

THROUGH-HOLE

ECCN Kodu

EAR99

Jesd30 Code

R-PSIP-T3

REACH Uyumluluk Kodu

unknown

Transistor Application

SWITCHING

Operating Temperaturemax

150 °C

Yüzey Montaj

NO

Pin Sayısı

3

Part Life Cycle Code

Transferred