Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Transistor Application
- POWER CONTROL
- Turn On Time
- 73 ns
- Kılıf / Paket
- ISOTOP
- Maximum Gate Emitter Voltage
- - 20 V, + 20 V
- Ürün Tipi
- IGBT Transistors
- Input Capacitance Cies Vce
- 2.5nF @ 25V
- Additional Feature
- UL RECOGNIZED, HIGH RELIABILITY
- Gateemitter Leakage Current
- 300 nA
- Transistor Element Material
- SILICON
- Voltage Collector Emitter Breakdown Max
- 1200V
- Paket
- Tube
- Number Of Elements
- 1
- Kurşunsuz Kodu
- yes
- Terminal Sayısı
- 4
- Vceon Max Vge Ic
- 3.7V @ 15V, 50A
- Continuous Collector Current At25 C
- 72 A
- Turn Off Timenom Toff
- 305 ns
- Montaj Tipi
- Chassis Mount
- Pd Power Dissipation
- 379 W
- Maks. Çalışma Sıcaklığı
- + 150 C
- Montaj Stili
- Screw Mount
- Yayın Yılı
- 2005
- Max Collector Current
- 72A
- Akım Değeri
- 110A
- Ntc Thermistor
- No
- Ürün Durumu
- Obsolete
- Case Connection
- ISOLATED
- JESD-609 Kodu
- e1
- Power Max
- 379W
- Ambalaj
- Tube
- Terminal Pozisyonu
- UPPER
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Pin Sayısı
- 4
- Pin Sayısı
- 4
- Collectoremitter Breakdown Voltage
- 1.2kV
- Fabrika Paket Adedi
- 1
- Collector Emitter Voltage Vceo
- 3.7V
- Polaritychannel Type
- N-CHANNEL
- Collector Emitter Voltage Vceo Max
- 1.2 kV
- Çalışma Sıcaklığı
- -55°C~150°C TJ
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