APT50GT120B2RG

Specifications

Turn On Time

77 ns

Transistor Application

POWER CONTROL

Kılıf / Paket

TO-247-3

Collectoremitter Saturation Voltage

3.2 V

Maximum Gate Emitter Voltage

- 30 V, + 30 V

Turn On Delay Time

24 ns

Giriş Tipi

Standard

Transistor Element Material

SILICON

Voltage Collector Emitter Breakdown Max

1200V

Paket

Tube

Terminal Sayısı

3

Vceon Max Vge Ic

3.7V @ 15V, 50A

Number Of Elements

1

Kurşunsuz Kodu

yes

Continuous Collector Current At25 C

94 A

Switching Energy

2330μJ (off)

Turn Off Timenom Toff

303 ns

Element Configuration

Single

Montaj Stili

Through Hole

Maks. Çalışma Sıcaklığı

+ 150 C

Montaj Tipi

Through Hole

Pd Power Dissipation

625 W

Max Collector Current

94A

Ürün Durumu

Active

JESD-609 Kodu

e1

Case Connection

COLLECTOR

Power Max

625W

Ambalaj

Tube

Nem Hassasiyeti (MSL)

1 (Unlimited)

Turn Off Delay Time

230 ns

Radyasyon Dayanımı

No

Pin Sayısı

3

Test Conditions

800V, 50A, 4.7 Ω, 15V

Pin Sayısı

3

Fabrika Paket Adedi

1

Collectoremitter Breakdown Voltage

1.2kV

Fabrika Tedarik Süresi

24 Weeks

Td Onoff25c

24ns/230ns

Temel Ürün No

APT50GT120

Collector Emitter Voltage Vceo

1.2kV