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RoHS
Compliant
Support
Technical team support
Specifications
- Kılıf / Paket
- TO-247-3
- Collectoremitter Saturation Voltage
- 2.2 V
- Transistor Application
- POWER CONTROL
- Turn On Time
- 55 ns
- Giriş Tipi
- Standard
- Maximum Gate Emitter Voltage
- - 20 V, + 20 V
- Additional Feature
- LOW CONDUCTION LOSS
- Transistor Element Material
- SILICON
- Voltage Collector Emitter Breakdown Max
- 600 V
- Jesd30 Code
- R-PSFM-T3
- Paket
- Tube
- Switching Energy
- 465μJ (on), 637μJ (off)
- Continuous Collector Current At25 C
- 100 A
- Number Of Elements
- 1
- Kurşunsuz Kodu
- yes
- Technology
- Si
- Vceon Max Vge Ic
- 2.7V @ 15V, 50A
- Terminal Sayısı
- 3
- Pd Power Dissipation
- 625 W
- Montaj Tipi
- Through Hole
- Maks. Çalışma Sıcaklığı
- + 150 C
- Montaj Stili
- Through Hole
- Element Configuration
- Single
- Turn Off Timenom Toff
- 202 ns
- Akım Değeri
- 100A
- Power Max
- 625 W
- Case Connection
- COLLECTOR
- JESD-609 Kodu
- e1
- Ürün Durumu
- Active
- Max Collector Current
- 100A
- Yayın Yılı
- 1999
- Ambalaj
- Tube
- Test Conditions
- 400V, 50A, 5 Ω, 15V
- Pin Sayısı
- 3
- Radyasyon Dayanımı
- No
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Td Onoff25c
- 19ns/83ns
- Collectoremitter Breakdown Voltage
- 600V
- Collector Emitter Voltage Vceo Max
- 600 V
- Temel Ürün No
- APT50GP60
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