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Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Ambalaj
- Tube
- Continuous Collector Current
- 134
- Akım Değeri
- 134A
- Tip
- DIP, 0.9 (22.86mm) Row Spacing
- Pitch Mating
- 0.100 (2.54mm)
- Ürün Durumu
- Active
- JESD-609 Kodu
- e1
- Case Connection
- COLLECTOR
- Power Max
- 543 W
- Yayın Yılı
- 1999
- Max Collector Current
- 134A
- Montaj Tipi
- Through Hole
- Element Configuration
- Single
- Maks. Çalışma Sıcaklığı
- 150 °C
- Turn Off Timenom Toff
- 600 ns
- Switching Energy
- 4495μJ (off)
- Technology
- Si
- Number Of Elements
- 1
- Kurşunsuz Kodu
- yes
- Terminal Sayısı
- 3
- Vceon Max Vge Ic
- 2.1V @ 15V, 50A
- Contact Material Mating
- Beryllium Copper
- Paket
- Tube
- Additional Feature
- HIGH RELIABILITY
- Power Dissipation
- 543
- Voltage Collector Emitter Breakdown Max
- 1200V
- Transistor Element Material
- SILICON
- Giriş Tipi
- Standard
- Pitch Post
- 0.100 (2.54mm)
- Maximum Gate Emitter Voltage
- - 20 V, + 20 V
- Ürün Tipi
- IGBT Transistors
- Contact Finish Thickness Mating
- 10.0µin (0.25µm)
- Kılıf / Paket
- TO-247-3 Variant
- Collectoremitter Saturation Voltage
- 1.7
- Transistor Application
- POWER CONTROL
- Turn On Time
- 55 ns
- Terminal Kaplaması
- Tin/Silver/Copper (Sn/Ag/Cu)
- Gate Charge
- 315nC
- Terminal
- Wire Wrap
- Housing Material
- Polyamide (PA46), Nylon 4/6, Glass Filled
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