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Microsemi Corporation

APT45GR65BSCD10

Single IGBTs

RoHS: Compliant

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Compliant

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Specifications

Current Collector Pulsed Icm
224A
Yayın Yılı
2001
Max Collector Current
118A
Gateemitter Voltagemax
30V
Power Max
543W
Ambalaj
Bulk
Gateemitter Thr Voltagemax
6.5V
Gate Charge
203nC
RoHS Durumu
RoHS Compliant
Vceon Max Vge Ic
2.4V @ 15V, 45A
Parça Durumu
Obsolete
Igbt Type
NPT
Max Power Dissipation
543W
Montaj Tipi
Through Hole
Polaritychannel Type
N-CHANNEL
Collector Emitter Voltage Vceo
2.4V
Çalışma Sıcaklığı
-55°C~150°C TJ
Montaj
Through Hole
Reverse Recovery Time
80 ns
Nem Hassasiyeti (MSL)
1 (Unlimited)
Kılıf / Paket
TO-247-3
Test Conditions
433V, 45A, 4.3 Ω, 15V
Collectoremitter Breakdown Voltage
650V
Fabrika Tedarik Süresi
22 Weeks
Giriş Tipi
Standard
Td Onoff25c
15ns/100ns

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