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Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Maximum Gate Emitter Voltage
- - 20 V, + 20 V
- Giriş Tipi
- Standard
- Turn On Time
- 47 ns
- Transistor Application
- POWER CONTROL
- Birim Ağırlık
- 1.340411 oz
- Collectoremitter Saturation Voltage
- 3.3V
- Kılıf / Paket
- TO-247-3
- Paket
- Tube
- Jesd30 Code
- R-PSFM-T3
- Continuous Collector Current Ic Max
- 100 A
- Tradename
- POWER MOS 7 IGBT
- Transistor Element Material
- SILICON
- Voltage Collector Emitter Breakdown Max
- 1200V
- Gateemitter Leakage Current
- 100 nA
- Additional Feature
- LOW CONDUCTION LOSS
- Turn Off Timenom Toff
- 230 ns
- Yükseklik
- 5.31mm
- Maks. Çalışma Sıcaklığı
- + 150 C
- Montaj Stili
- Through Hole
- Element Configuration
- Single
- Pd Power Dissipation
- 625 W
- Montaj Tipi
- Through Hole
- Vceon Max Vge Ic
- 3.9V @ 15V, 45A
- Terminal Sayısı
- 3
- Number Of Elements
- 1
- Kurşunsuz Kodu
- yes
- Continuous Collector Current At25 C
- 100 A
- Switching Energy
- 900μJ (on), 904μJ (off)
- Ambalaj
- Tube
- Max Collector Current
- 100A
- Yayın Yılı
- 1999
- Power Max
- 625 W
- Ürün Durumu
- Active
- JESD-609 Kodu
- e1
- Case Connection
- COLLECTOR
- Akım Değeri
- 100A
- Weight
- 38.000013g
- Continuous Collector Current
- 100A
- Fabrika Paket Adedi
- 1
- Collectoremitter Breakdown Voltage
- 1.2kV
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