Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Power Max
- 625 W
- Ürün Durumu
- Active
- JESD-609 Kodu
- e1
- Case Connection
- COLLECTOR
- Akım Değeri
- 113A
- Continuous Collector Current
- 113A
- Max Collector Current
- 113A
- Ambalaj
- Tube
- Continuous Collector Current At25 C
- 113 A
- Switching Energy
- 900μJ (on), 905μJ (off)
- Vceon Max Vge Ic
- 3.9V @ 15V, 45A
- Terminal Sayısı
- 3
- Kurşunsuz Kodu
- yes
- Number Of Elements
- 1
- Yükseklik
- 5.31mm
- Element Configuration
- Single
- Montaj Stili
- Through Hole
- Maks. Çalışma Sıcaklığı
- + 150 C
- Pd Power Dissipation
- 625 W
- Montaj Tipi
- Through Hole
- Turn Off Timenom Toff
- 230 ns
- Voltage Collector Emitter Breakdown Max
- 1200V
- Transistor Element Material
- SILICON
- Gateemitter Leakage Current
- 100 nA
- Continuous Collector Current Ic Max
- 113 A
- Tradename
- POWER MOS 7 IGBT
- Paket
- Tube
- Collectoremitter Saturation Voltage
- 3.3V
- Kılıf / Paket
- TO-247-3 Variant
- Turn On Time
- 47 ns
- Transistor Application
- POWER CONTROL
- Maximum Gate Emitter Voltage
- - 30 V, + 30 V
- Giriş Tipi
- Standard
- Minimum Operating Temperature
- - 55 C
- Current Collector Pulsed Icm
- 170A
- Seri
- POWER MOS 7®
- Gate Charge
- 185nC
- Terminal Kaplaması
- TIN SILVER COPPER
- Configuration
- Single
- Gateemitter Thr Voltagemax
- 6V
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