APT35GT120JU3

Specifications

Maximum Gate Emitter Voltage

20 V

Transistor Application

POWER CONTROL

Turn On Time

135 ns

Kılıf / Paket

ISOTOP

Collectoremitter Saturation Voltage

1.7 V

Paket

Bulk

Input Capacitance Cies Vce

2.53nF @ 25V

Additional Feature

AVALANCHE RATED, LOW CONDUCTION LOSS

Voltage Collector Emitter Breakdown Max

1200V

Transistor Element Material

SILICON

Power Dissipation

260

Gateemitter Leakage Current

500 nA

Turn Off Timenom Toff

610 ns

Pd Power Dissipation

260 W

Montaj Tipi

Chassis Mount

Montaj Stili

SMD/SMT

Maks. Çalışma Sıcaklığı

+ 150 C

Number Of Elements

1

Kurşunsuz Kodu

yes

Vceon Max Vge Ic

2.1V @ 15V, 35A

Terminal Sayısı

4

Continuous Collector Current At25 C

55 A

Ambalaj

Tube

Terminal Pozisyonu

UPPER

Max Collector Current

55A

Yayın Yılı

2004

Continuous Collector Current

55

Power Max

260W

Ntc Thermistor

No

Ürün Durumu

Active

Case Connection

ISOLATED

Fabrika Tedarik Süresi

36 Weeks

Collectoremitter Breakdown Voltage

1.2kV

Fabrika Paket Adedi

1

Nem Hassasiyeti (MSL)

1 (Unlimited)

Pin Sayısı

4

Pin Sayısı

4

Current Collector Cutoff Max

5mA

Çalışma Sıcaklığı

-55°C~150°C TJ

ECCN Kodu

EAR99