APT35GT120JU2

Specifications

Transistor Element Material

SILICON

Voltage Collector Emitter Breakdown Max

1200V

Power Dissipation

260

Gateemitter Leakage Current

500 nA

Input Capacitance Cies Vce

2.53nF @ 25V

Additional Feature

AVALANCHE RATED, LOW CONDUCTION LOSS

Paket

Bulk

Collectoremitter Saturation Voltage

1.7 V

Kılıf / Paket

ISOTOP

Turn On Time

135 ns

Transistor Application

POWER CONTROL

Maximum Gate Emitter Voltage

20 V

Power Max

260W

Ntc Thermistor

No

Ürün Durumu

Active

Case Connection

ISOLATED

Continuous Collector Current

55

Max Collector Current

55A

Ambalaj

Tube

Terminal Pozisyonu

UPPER

Continuous Collector Current At25 C

55 A

Vceon Max Vge Ic

2.1V @ 15V, 35A

Terminal Sayısı

4

Kurşunsuz Kodu

yes

Number Of Elements

1

Montaj Stili

SMD/SMT

Maks. Çalışma Sıcaklığı

+ 150 C

Pd Power Dissipation

260 W

Montaj Tipi

Chassis Mount

Turn Off Timenom Toff

610 ns

Collector Emitter Voltage Vceo Max

1200 V

Temel Ürün No

APT35GT120

Collector Emitter Voltage Vceo

2.1V

Polaritychannel Type

N-CHANNEL

Montaj

Chassis Mount, Screw

Tedarikçi Cihaz Paketi

SOT-227

Terminal Formu

UNSPECIFIED

ECCN Kodu

EAR99

Input

Standard

Current Collector Cutoff Max

5mA