Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Igbt Type
- NPT
- Transistor Application
- POWER CONTROL
- Terminal Kaplaması
- Tin/Silver/Copper (Sn/Ag/Cu)
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Ambalaj
- Tube
- JESD-609 Kodu
- e1
- Polaritychannel Type
- N-CHANNEL
- Kılıf / Paket
- TO-247-3
- Parça Durumu
- Obsolete
- Kurşunsuz
- Lead Free
- Max Collector Current
- 32A
- Switching Energy
- 2.7mJ
- Vceon Max Vge Ic
- 3.2V @ 15V, 15A
- Turn Off Timenom Toff
- 175 ns
- Yayın Yılı
- 2000
- Akım Değeri
- 32A
- Voltage Collector Emitter Breakdown Max
- 1200V
- Additional Feature
- AVALANCHE RATED
- Max Power Dissipation
- 200W
- Case Connection
- COLLECTOR
- Gate Charge
- 95nC
- Collectoremitter Breakdown Voltage
- 1.2kV
- Giriş Tipi
- Standard
- Kurşunsuz Kodu
- yes
- Jesd30 Code
- R-PSFM-T3
- RoHS Durumu
- RoHS Compliant
- Montaj
- Through Hole
- Montaj Tipi
- Through Hole
- Element Configuration
- Single
- Voltage Rated Dc
- 1.2kV
- Transistor Element Material
- SILICON
- Collector Emitter Voltage Vceo
- 1.2kV
- Current Collector Pulsed Icm
- 64A
- Number Of Elements
- 1
- Td Onoff25c
- 17ns/105ns
- Radyasyon Dayanımı
- No
- Terminal Sayısı
- 3
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Pin Sayısı
- 3
- Turn On Time
- 20 ns
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