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APT150GN60LDQ4G

Microsemi Corporation

APT150GN60LDQ4G

Single IGBTs

In StockRoHS: Compliant

Shipping

Same-day dispatch from stock

Genuine parts

Verified sourcing

RoHS

Compliant

Support

Technical team support

Specifications

Min. Çalışma Sıcaklığı
-55 °C
Temel Ürün No
APT150
Gateemitter Voltagemax
30V
RoHS Durumu
RoHS Compliant
Tedarikçi Cihaz Paketi
TO-264 [L]
Fabrika Tedarik Süresi
25 Weeks
Giriş Tipi
Standard
Maks. Çalışma Sıcaklığı
175 °C
Continuous Collector Current At25 C
220 A
Gateemitter Leakage Current
600 nA
Montaj Stili
Through Hole
Turn On Time
154 ns
RoHS
Details
Configuration
Single
Radyasyon Dayanımı
No
Çalışma Sıcaklığı
-55°C~175°C TJ
Terminal Sayısı
3
Number Of Elements
1
Fabrika Paket Adedi
1
Kurşunsuz
Lead Free
Maximum Gate Emitter Voltage
30 V
Test Conditions
400V, 150A, 1 Ω, 15V
Kılıf / Paket
TO-264-3, TO-264AA
Terminal Kaplaması
TIN SILVER COPPER
Nem Hassasiyeti (MSL)
1 (Unlimited)
Polaritychannel Type
N-CHANNEL
JESD-609 Kodu
e1
Paket
Tube
Igbt Type
Trench Field Stop
Collectoremitter Saturation Voltage
1.45 V
Max Power Dissipation
536W
Voltage Collector Emitter Breakdown Max
600 V
Additional Feature
HIGH RELIABILITY
Gate Charge
970nC
Pd Power Dissipation
536 W
Turn Off Timenom Toff
575 ns
Birim Ağırlık
0.352740 oz
Lifecycle Status
Production (Last Updated: 2 months ago)
Collector Emitter Voltage Vceo Max
600 V
Vceon Max Vge Ic
1.85V @ 15V, 150A

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