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Priced by quantity and lead time.
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Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Transistor Element Material
- SILICON
- Collector Emitter Voltage Vceo
- 1.2kV
- Current Collector Pulsed Icm
- 50A
- Number Of Elements
- 1
- Voltage Rated Dc
- 1.2kV
- Seri
- POWER MOS 7®
- Pin Sayısı
- 3
- Turn On Time
- 21 ns
- Td Onoff25c
- 9ns/28ns
- Terminal Sayısı
- 3
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Radyasyon Dayanımı
- No
- Giriş Tipi
- Standard
- Kurşunsuz Kodu
- yes
- Collectoremitter Breakdown Voltage
- 1.2kV
- Montaj
- Through Hole
- Montaj Tipi
- Through Hole
- Element Configuration
- Single
- Jesd30 Code
- R-PSFM-T3
- RoHS Durumu
- RoHS Compliant
- Turn Off Timenom Toff
- 270 ns
- Vceon Max Vge Ic
- 3.9V @ 15V, 13A
- Jedec95 Code
- TO-220AB
- Voltage Collector Emitter Breakdown Max
- 1200V
- Additional Feature
- LOW CONDUCTION LOSS
- Max Power Dissipation
- 250W
- Gate Charge
- 55nC
- Case Connection
- COLLECTOR
- Akım Değeri
- 41A
- Transistor Application
- POWER CONTROL
- Ambalaj
- Tube
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Terminal Kaplaması
- TIN SILVER COPPER
- JESD-609 Kodu
- e1
- Polaritychannel Type
- N-CHANNEL
- Igbt Type
- PT
- Kurşunsuz
- Lead Free
- Switching Energy
- 114μJ (on), 165μJ (off)
- Max Collector Current
- 41A
- Kılıf / Paket
- TO-220-3
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