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2N3866A

Microsemi Corporation

2N3866A

RF BJT Transistors

RoHS: Compliant

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Specifications

Max Collector Current
400mA
Number Of Elements
1
Frequency Transition
400MHz
Configuration
SINGLE
Kılıf / Paket
TO-205AD, TO-39-3 Metal Can
Transistor Element Material
SILICON
Kurşunsuz Kodu
no
Dc Current Gain Hfe Min Ic Vce
25 @ 50mA 5V
Collectoremitter Breakdown Voltage
30V
Terminal Sayısı
3
Parça Durumu
Obsolete
Ambalaj
Bulk
Terminal Kaplaması
Tin/Lead (Sn/Pb)
Montaj Tipi
Through Hole
Collector Base Voltage Vcbo
60V
Emitter Base Voltage Vebo
3.5V
Power Dissipation
1W
Frekans
800MHz
Terminal Pozisyonu
BOTTOM
Nem Hassasiyeti (MSL)
1 (Unlimited)
Terminal Formu
WIRE
Transistor Type
NPN
Yayın Yılı
2007
Montaj
Through Hole
Çalışma Sıcaklığı
-65°C~200°C TJ
Radyasyon Dayanımı
No
RoHS Durumu
Non-RoHS Compliant
JESD-609 Kodu
e0
Collector Emitter Voltage Vceo
30V
Pin Sayısı
3
Max Power Dissipation
1W

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