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Microsemi Corporation

2N3838

Arrays BJT Transistors

RoHS: Compliant

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RoHS

Compliant

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Specifications

RoHS
N
Radyasyon Dayanımı
No
Collector Emitter Voltage Vceo
400mV
RoHS Durumu
Non-RoHS Compliant
Ürün Durumu
Active
Currentcollector Ic Max
600mA
Technology
Si
Pin Sayısı
6
Max Power Dissipation
350mW
Maks. Çalışma Sıcaklığı
200°C
Nem Hassasiyeti (MSL)
1 (Unlimited)
Transistor Type
NPN, PNP
Voltage Collector Emitter Breakdown Max
40V
Tedarikçi Cihaz Paketi
6-Flatpack
Çalışma Sıcaklığı
-65°C~200°C TJ
Montaj
Surface Mount
Fabrika Tedarik Süresi
12 Weeks
Paket
Bulk
Vce Saturation Max Ib Ic
400mV @ 15mA, 150mA
Dc Current Gain Hfe Min Ic Vce
100 @ 150mA 10V
Temel Ürün No
2N380
Ürün Tipi
BJTs - Bipolar Transistors
Power Max
350mW
Collectoremitter Breakdown Voltage
40V
Ambalaj
Bulk
Parça Durumu
Active
Montaj Tipi
Surface Mount
Current Collector Cutoff Max
10μA ICBO
Collector Base Voltage Vcbo
60V
Max Collector Current
600mA
Min. Çalışma Sıcaklığı
-65°C
Fabrika Paket Adedi
1
Kılıf / Paket
6-FlatPack

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