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Priced by quantity and lead time.
Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Max Collector Current
- 50mA
- Power Dissipation
- 350mW
- Emitter Base Voltage Vebo
- 5V
- Transistor Type
- 2 PNP (Dual)
- Dc Current Gain Hfe Min Ic Vce
- 300 @ 1mA 5V
- Montaj Tipi
- Through Hole
- Terminal Sayısı
- 8
- Collector Emitter Voltage Vceo
- 60V
- JESD-609 Kodu
- e0
- Ambalaj
- Bulk
- Number Of Elements
- 2
- RoHS Durumu
- Non-RoHS Compliant
- Jesd30 Code
- O-MBCY-W8
- Terminal Formu
- WIRE
- Collectoremitter Breakdown Voltage
- 60V
- Montaj
- Surface Mount, Through Hole
- Radyasyon Dayanımı
- No
- Transistor Element Material
- SILICON
- Max Power Dissipation
- 350mW
- Fabrika Tedarik Süresi
- 12 Weeks
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Pin Sayısı
- 6
- Polarity
- PNP
- Kurşunsuz Kodu
- no
- Çalışma Sıcaklığı
- -65°C~200°C TJ
- Vce Saturation Max Ib Ic
- 250mV @ 100μA, 1mA
- Terminal Pozisyonu
- BOTTOM
- Kılıf / Paket
- TO-78-6 Metal Can
- Current Collector Cutoff Max
- 10μA ICBO
- Yayın Yılı
- 2007
- Collector Base Voltage Vcbo
- 60V
- ECCN Kodu
- EAR99
- Terminal Kaplaması
- TIN LEAD
- Parça Durumu
- Obsolete
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