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Priced by quantity and lead time.
Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Qualification Status
- Not Qualified
- Collectoremitter Breakdown Voltage
- 60V
- Yüzey Montaj
- NO
- Tepe Reflow Süresi (maks. sn)
- NOT SPECIFIED
- Radyasyon Dayanımı
- No
- Polaritychannel Type
- PNP
- Voltage Collector Emitter Breakdown Max
- 60V
- Max Power Dissipation
- 350mW
- Currentcollector Ic Max
- 50mA
- Pin Sayısı
- 6
- Kurşunsuz Kodu
- no
- Çalışma Sıcaklığı
- -65°C~200°C TJ
- Vce Saturation Max Ib Ic
- 250mV @ 100μA, 1mA
- Collector Base Voltage Vcbo
- 60V
- Lifecycle Status
- IN PRODUCTION (Last Updated: 3 weeks ago)
- ECCN Kodu
- EAR99
- Terminal Kaplaması
- TIN LEAD
- Parça Durumu
- Active
- Emitter Base Voltage Vebo
- 5V
- Transistor Type
- 2 PNP (Dual)
- Transition Frequency
- 100MHz
- Terminal Sayısı
- 8
- Montaj Tipi
- Through Hole
- Transistor Application
- AMPLIFIER
- Collector Emitter Voltage Vceo
- 60V
- JESD-609 Kodu
- e0
- Jesd30 Code
- O-MBCY-W8
- RoHS Durumu
- Non-RoHS Compliant
- Tepe Reflow Sıcaklığı (°C)
- NOT SPECIFIED
- Terminal Formu
- WIRE
- Additional Feature
- LOW NOISE
- Montaj
- Through Hole
- Transistor Element Material
- SILICON
- Fabrika Tedarik Süresi
- 12 Weeks
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Pin Sayısı
- 8
- Configuration
- SEPARATE, 2 ELEMENTS
- Polarity
- PNP
- HTS Kodu
- 8541.21.00.95
- Current Collector Cutoff Max
- 10μA ICBO
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