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Microsemi Corporation

2N2919L

Arrays BJT Transistors

RoHS: Compliant

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Specifications

Dc Current Gain Hfe Min Ic Vce
150 @ 1mA 5V
Montaj Tipi
Through Hole
Temel Ürün No
2N2919
Terminal Sayısı
6
Collector Emitter Voltage Vceo
60V
Max Collector Current
30mA
Transistor Type
2 NPN (Dual)
Power Max
350mW
Paket
Bulk
RoHS Durumu
Non-RoHS Compliant
Terminal Formu
WIRE
Tedarikçi Cihaz Paketi
TO-78-6
JESD-609 Kodu
e0
Ambalaj
Bulk
Number Of Elements
2
Polaritychannel Type
NPN
Radyasyon Dayanımı
No
Voltage Collector Emitter Breakdown Max
60V
Transistor Element Material
SILICON
Max Power Dissipation
350mW
Fabrika Tedarik Süresi
12 Weeks
Nem Hassasiyeti (MSL)
1 (Unlimited)
Pin Sayısı
6
Montaj
Through Hole
Ürün Durumu
Active
Yayın Yılı
2007
Collector Base Voltage Vcbo
70V
ECCN Kodu
EAR99
Terminal Kaplaması
TIN LEAD
Parça Durumu
Active
Configuration
SEPARATE, 2 ELEMENTS
Currentcollector Ic Max
30mA
Pin Sayısı
6
HTS Kodu
8541.21.00.95
Kurşunsuz Kodu
no
Çalışma Sıcaklığı
200°C TJ
Vce Saturation Max Ib Ic
300mV @ 100μA, 1mA
Technology
Si
Kılıf / Paket
TO-78-6 Metal Can
Current Collector Cutoff Max
10μA ICBO

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