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Microsemi Corporation

2A5

RF BJT Transistors

RoHS: Compliant

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Specifications

Power Max
5.3W
Nem Hassasiyeti (MSL)
1 (Unlimited)
Collectoremitter Breakdown Voltage
22V
Voltage Collector Emitter Breakdown Max
22V
Max Power Dissipation
5.3W
Max Collector Current
3mA
Collector Emitter Voltage Vceo
22V
Tedarikçi Cihaz Paketi
55ET
Currentcollector Ic Max
3mA
Parça Durumu
Obsolete
Montaj Tipi
Stud Mount
Transistor Type
NPN
Min. Çalışma Sıcaklığı
-65°C
Ambalaj
Bulk
RoHS Durumu
RoHS Compliant
Pin Sayısı
55
Radyasyon Dayanımı
No
Lifecycle Status
IN PRODUCTION (Last Updated: 1 month ago)
Frequency Transition
3.4GHz~3.7GHz
Maks. Çalışma Sıcaklığı
200°C
Montaj
Stud
Çalışma Sıcaklığı
200°C TJ
Kılıf / Paket
55ET
Dc Current Gain Hfe Min Ic Vce
20 @ 100mA 5V
Gain
7dB ~ 9dB

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