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Microsemi Corporation

1035MP

RF BJT Transistors

RoHS: Compliant

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Specifications

Collectoremitter Breakdown Voltage
65V
Nem Hassasiyeti (MSL)
1 (Unlimited)
Dc Current Gain Hfe Min Ic Vce
20 @ 100mA 5V
Kılıf / Paket
55FW-1
Max Power Dissipation
125W
Frequency Transition
1.025GHz~1.15GHz
Montaj Tipi
Chassis Mount
Parça Durumu
Obsolete
Çalışma Sıcaklığı
200°C TJ
Fabrika Tedarik Süresi
20 Weeks
RoHS Durumu
RoHS Compliant
Max Collector Current
2.5A
Ambalaj
Bulk
Kurşunsuz Kodu
no
Montaj
Chassis Mount
Transistor Type
NPN
Pin Sayısı
4
ECCN Kodu
EAR99
Currentcollector Ic Max
2.5A
Gain
10dB ~ 10.5dB

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