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Microsemi Corporation

1014-12

RF BJT Transistors

RoHS: Compliant

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Specifications

Montaj
Chassis Mount, Screw
Dc Current Gain Hfe Min Ic Vce
10 @ 200mA 5V
Tedarikçi Cihaz Paketi
55LT
Continuous Collector Current
5
Ambalaj
Bulk
Collectoremitter Breakdown Voltage
50V
Montaj Tipi
Chassis Mount
Max Collector Current
5A
Çalışma Sıcaklığı
200°C TJ
Transistor Type
NPN
Voltage Collector Emitter Breakdown Max
50V
Collector Emitter Voltage Vceo
50V
Kılıf / Paket
55LT
Max Power Dissipation
39W
Pin Sayısı
55
Frequency Transition
1GHz~1.4GHz
Contact Plating
Tin
Transistor Polarity
NPN
Lifecycle Status
IN PRODUCTION (Last Updated: 3 weeks ago)
Nem Hassasiyeti (MSL)
1 (Unlimited)
Min. Çalışma Sıcaklığı
-65°C
Parça Durumu
Obsolete
Maks. Çalışma Sıcaklığı
200°C
RoHS Durumu
RoHS Compliant
RoHS
Compliant
Yayın Yılı
1996
Transition Frequency
1.4 GHz
Seri
*
Power Max
39W
Currentcollector Ic Max
5A
Gain
6.8dB

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