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0912-25

Microsemi Corporation

0912-25

RF BJT Transistors

RoHS: Compliant

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Specifications

Dc Current Gain Hfe Min Ic Vce
10 @ 300mA 5V
Collectoremitter Breakdown Voltage
55V
Power Rating
62.5 mW (1/16 W)
ECCN Kodu
EAR99
JESD-609 Kodu
e0
Polarity
NPN
Kılıf Kodu (mm)
1005
Seri
High Precision Thin Film
Ambalaj
Bulk
Transition Frequency
960 MHz
Parça Durumu
Obsolete
Maks. Çalışma Sıcaklığı
+ 155 C
Terminal Pozisyonu
DUAL
Birim Ağırlık
0.000020 oz
Ürün Tipi
Thin Film Resistors
Transistor Type
NPN
Yükseklik
0.35 mm
Fabrika Paket Adedi
10000
Terminal Formu
FLAT
Montaj Stili
PCB Mount
Radyasyon Dayanımı
No
Power Dissipation
125W
Voltage Rating
25 V
Jesd30 Code
R-CDFM-F2
Gain
8.5dB ~ 10dB
Direnç
33.2 kOhms
Maks. Çalışma Sıcaklığı
200 °C
Number Of Elements
1
Technology
Thin Film
Nem Hassasiyeti (MSL)
1 (Unlimited)
Lifecycle Status
Obsolete (Last Updated: 2 months ago)
Kılıf / Paket
55CT
Transistor Application
AMPLIFIER
Min. Çalışma Sıcaklığı
-65 °C
Transistor Element Material
SILICON
Pin Sayısı
2
Pin Sayısı
55
RoHS Durumu
RoHS Compliant
Terminal Stili
SMD/SMT
Kılıf Kodu (inç)
0402

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