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Microsemi Corporation

0910-60M

RF BJT Transistors

RoHS: Compliant

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Compliant

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Specifications

Gain
8dB ~ 8.5dB
Pin Sayısı
55
Kurşunsuz Kodu
no
Terminal Pozisyonu
DUAL
Frequency Transition
890MHz~1GHz
Parça Durumu
Obsolete
RoHS Durumu
RoHS Compliant
Polaritychannel Type
NPN
Terminal Kaplaması
TIN LEAD
Highest Frequency Band
ULTRA HIGH FREQUENCY B
Collector Emitter Voltage Vceo
65V
Additional Feature
HIGH RELIABILITY
Montaj Tipi
Chassis Mount
Çalışma Sıcaklığı
200°C TJ
Number Of Elements
1
Nem Hassasiyeti (MSL)
1 (Unlimited)
Montaj
Chassis Mount, Screw
Ambalaj
Bulk
Pin Sayısı
2
Lifecycle Status
IN PRODUCTION (Last Updated: 1 month ago)
Transistor Type
NPN
Max Power Dissipation
180W
Tepe Reflow Süresi (maks. sn)
NOT SPECIFIED
Terminal Formu
FLAT
ECCN Kodu
EAR99
Jesd30 Code
R-CDFM-F2
Terminal Sayısı
2
Transistor Element Material
SILICON
Transistor Application
AMPLIFIER
Yayın Yılı
2003
Qualification Status
Not Qualified
JESD-609 Kodu
e0
Kılıf / Paket
55AW
Configuration
SINGLE
Tepe Reflow Sıcaklığı (°C)
NOT SPECIFIED
Power Max
180W
Max Collector Current
8A
Collectoremitter Breakdown Voltage
65V

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