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C3 ChipZentronix

Micron Technology Inc.

MT28EW512ABA1HPN-0SIT

Memory

RoHS: Compliant

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RoHS

Compliant

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Specifications

Jesd30 Code
R-PBGA-B56
Terminal Sayısı
56
Çalışma Sıcaklığı
-40°C~85°C TA
Organization
32MX16
Terminal Pozisyonu
BOTTOM
Besleme Gerilimi
3V
Montaj Tipi
Surface Mount
Supply Voltagemax Vsup
3.6V
Alternate Memory Width
8
Memory Width
16
Memory Density
536870912 bit
Parça Durumu
Active
Programming Voltage
3V
Memory Types
Non-Volatile
Maks. Oturma Yüksekliği
1mm
Memory Interface
Parallel
Besleme Gerilimi
2.7V~3.6V
Terminal Adımı
0.8mm
Memory Size
512Mb 64M x 8 32M x 16
Yüzey Montaj
YES
RoHS Durumu
ROHS3 Compliant
Write Cycle Time Word Page
60ns
Operating Mode
ASYNCHRONOUS
Genişlik
7mm
Fabrika Tedarik Süresi
9 Weeks
Nem Hassasiyeti (MSL)
3 (168 Hours)
Kılıf / Paket
56-VFBGA
Uzunluk
9mm
Access Time
95ns
Fonksiyon Sayısı
1
Supply Voltagemin Vsup
2.7V
Ambalaj
Tray
Memory Format
FLASH

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