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MT28EW512ABA1HPC-0SIT

Micron Technology Inc.

MT28EW512ABA1HPC-0SIT

Memory

RoHS: Compliant

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Specifications

Yayın Yılı
2016
Yüzey Montaj
YES
RoHS Durumu
ROHS3 Compliant
Write Cycle Time Word Page
60ns
Programming Voltage
3V
Memory Types
Non-Volatile
Memory Interface
Parallel
Maks. Oturma Yüksekliği
1.4mm
Terminal Adımı
1mm
Besleme Gerilimi
2.7V~3.6V
Memory Size
512Mb 64M x 8 32M x 16
Ambalaj
Tray
Tepe Reflow Süresi (maks. sn)
NOT SPECIFIED
Memory Format
FLASH
Operating Mode
ASYNCHRONOUS
Fabrika Tedarik Süresi
6 Weeks
Genişlik
11mm
Kılıf / Paket
64-LBGA
Nem Hassasiyeti (MSL)
3 (168 Hours)
Uzunluk
13mm
Supply Voltagemin Vsup
2.7V
Fonksiyon Sayısı
1
Access Time
95ns
Terminal Pozisyonu
BOTTOM
Besleme Gerilimi
3V
Jesd30 Code
R-PBGA-B64
Terminal Sayısı
64
Organization
32MX16
Çalışma Sıcaklığı
-40°C~85°C TA
Usage Level
Industrial grade
Memory Density
536870912 bit
Parça Durumu
Active
Tepe Reflow Sıcaklığı (°C)
NOT SPECIFIED
Alternate Memory Width
8
Supply Voltagemax Vsup
3.6V
Montaj Tipi
Surface Mount
Memory Width
16

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