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MT28EW128ABA1LJS-0SIT

Micron Technology Inc.

MT28EW128ABA1LJS-0SIT

Memory

RoHS: Compliant

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RoHS

Compliant

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Specifications

Çalışma Sıcaklığı
-40°C~85°C TA
Organization
8MX16
Terminal Sayısı
56
Terminal Kaplaması
MATTE TIN
Jesd30 Code
R-PDSO-G56
HTS Kodu
8542.32.00.51
Besleme Gerilimi
3V
Terminal Pozisyonu
DUAL
Memory Width
16
Montaj Tipi
Surface Mount
Supply Voltagemax Vsup
3.6V
Alternate Memory Width
8
Tepe Reflow Sıcaklığı (°C)
260
Parça Durumu
Active
Memory Density
134217728 bit
Memory Size
128Mb 16M x 8 8M x 16
Besleme Gerilimi
2.7V~3.6V
Terminal Adımı
0.5mm
Maks. Oturma Yüksekliği
1.2mm
Memory Interface
Parallel
Memory Types
Non-Volatile
Programming Voltage
3V
Write Cycle Time Word Page
60ns
ECCN Kodu
3A991.B.1.A
RoHS Durumu
ROHS3 Compliant
Yüzey Montaj
YES
Access Time
95ns
Fonksiyon Sayısı
1
Supply Voltagemin Vsup
2.7V
Uzunluk
18.4mm
Nem Hassasiyeti (MSL)
3 (168 Hours)
Kılıf / Paket
56-TFSOP (0.724, 18.40mm Width)
Genişlik
14mm
Fabrika Tedarik Süresi
6 Weeks
Operating Mode
ASYNCHRONOUS
Memory Format
FLASH
Tepe Reflow Süresi (maks. sn)
30
Ambalaj
Tray
JESD-609 Kodu
e3

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