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MT28EW01GABA1LJS-0SIT

Micron Technology Inc.

MT28EW01GABA1LJS-0SIT

Memory

RoHS: Compliant

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RoHS

Compliant

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Specifications

Supply Voltagemax Vsup
3.6V
Montaj Tipi
Surface Mount
Memory Width
16
Usage Level
Industrial grade
Memory Density
1073741824 bit
Parça Durumu
Active
Tepe Reflow Sıcaklığı (°C)
260
Jesd30 Code
R-PDSO-G56
Terminal Kaplaması
Matte Tin (Sn)
Terminal Sayısı
56
Çalışma Sıcaklığı
-40°C~85°C TA
Organization
64MX16
Terminal Pozisyonu
DUAL
Besleme Gerilimi
3V
Operating Mode
ASYNCHRONOUS
Fabrika Tedarik Süresi
6 Weeks
Genişlik
14mm
Nem Hassasiyeti (MSL)
3 (168 Hours)
Kılıf / Paket
56-TFSOP (0.724, 18.40mm Width)
Uzunluk
18.4mm
Access Time
95ns
Fonksiyon Sayısı
1
Supply Voltagemin Vsup
2.7V
Tepe Reflow Süresi (maks. sn)
30
Ambalaj
Tray
JESD-609 Kodu
e3
Memory Format
FLASH
Programming Voltage
3V
Memory Types
Non-Volatile
Maks. Oturma Yüksekliği
1.2mm
Memory Interface
Parallel
Terminal Adımı
0.5mm
Besleme Gerilimi
2.7V~3.6V
Memory Size
1Gb 128M x 8 64M x 16
Yayın Yılı
2007
Yüzey Montaj
YES
RoHS Durumu
ROHS3 Compliant
Write Cycle Time Word Page
60ns

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