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C3 ChipZentronix
MT28EW01GABA1HPC-0SIT

Micron Technology Inc.

MT28EW01GABA1HPC-0SIT

Memory

RoHS: Compliant

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RoHS

Compliant

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Specifications

Memory Size
1Gb 128M x 8 64M x 16
Terminal Adımı
1mm
Besleme Gerilimi
2.7V~3.6V
Memory Interface
Parallel
Maks. Oturma Yüksekliği
1.4mm
Memory Types
Non-Volatile
Programming Voltage
3V
Write Cycle Time Word Page
60ns
RoHS Durumu
ROHS3 Compliant
Yüzey Montaj
YES
Access Time
95ns
Fonksiyon Sayısı
1
Supply Voltagemin Vsup
2.7V
Uzunluk
13mm
Nem Hassasiyeti (MSL)
3 (168 Hours)
Kılıf / Paket
64-LBGA
Genişlik
11mm
Fabrika Tedarik Süresi
6 Weeks
Operating Mode
ASYNCHRONOUS
Memory Format
FLASH
Ambalaj
Tray
Tepe Reflow Süresi (maks. sn)
30
JESD-609 Kodu
e1
Çalışma Sıcaklığı
-40°C~85°C TA
Organization
64MX16
Terminal Sayısı
64
Terminal Kaplaması
Tin/Silver/Copper (Sn95.5Ag4.0Cu0.5)
Jesd30 Code
R-PBGA-B64
Besleme Gerilimi
3V
Terminal Pozisyonu
BOTTOM
Memory Width
16
Montaj Tipi
Surface Mount
Supply Voltagemax Vsup
3.6V
Tepe Reflow Sıcaklığı (°C)
260
Parça Durumu
Active
Memory Density
1073741824 bit
Usage Level
Industrial grade

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