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C3 ChipZentronix
MT25QL02GCBB8E12-0AAT

Micron Technology Inc.

MT25QL02GCBB8E12-0AAT

Memory

RoHS: Compliant

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RoHS

Compliant

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Specifications

Memory Width
8
Alternate Memory Width
1
Supply Voltagemax Vsup
3.6V
Montaj Tipi
Surface Mount
Usage Level
Automotive grade
Memory Density
2147483648 bit
Tepe Reflow Sıcaklığı (°C)
260
Parallelserial
SERIAL
Parça Durumu
Active
Jesd30 Code
R-PBGA-B24
Terminal Kaplaması
Tin/Silver/Copper (Sn/Ag/Cu)
Terminal Sayısı
24
Organization
256MX8
Çalışma Sıcaklığı
-40°C~105°C TA
Terminal Pozisyonu
BOTTOM
Besleme Gerilimi
3V
Operating Mode
SYNCHRONOUS
Fabrika Tedarik Süresi
6 Weeks
Genişlik
6mm
Uzunluk
8mm
Kılıf / Paket
24-TBGA
Nem Hassasiyeti (MSL)
3 (168 Hours)
Fonksiyon Sayısı
1
Supply Voltagemin Vsup
2.7V
Tepe Reflow Süresi (maks. sn)
30
Ambalaj
Bulk
JESD-609 Kodu
e1
Memory Format
FLASH
Seri
Automotive, AEC-Q100
Programming Voltage
3V
Maks. Oturma Yüksekliği
1.2mm
Memory Interface
SPI
Memory Types
Non-Volatile
Terminal Adımı
1mm
Besleme Gerilimi
2.7V~3.6V
Memory Size
2Gb 256M x 8
Yüzey Montaj
YES
RoHS Durumu
ROHS3 Compliant
Clock Frequency
133MHz
Write Cycle Time Word Page
8ms, 2.8ms

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