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C3 ChipZentronix

Micron Technology Inc.

M29W640GB7AN6E

Memory

RoHS: Compliant

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RoHS

Compliant

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Specifications

Memory Types
Non-Volatile
Uzunluk
18.4mm
Terminal Pozisyonu
DUAL
Besleme Gerilimi
2.7V~3.6V
Maks. Oturma Yüksekliği
1.2mm
Çalışma Sıcaklığı
-40°C~85°C TA
Organization
4MX16
Terminal Kaplaması
MATTE TIN
Access Time Max
70 ns
Yüzey Montaj
YES
RoHS Durumu
ROHS3 Compliant
Genişlik
12mm
Ambalaj
Tray
Temel Parça No
M29W640
Terminal Adımı
0.5mm
Montaj Tipi
Surface Mount
Operating Mode
ASYNCHRONOUS
Memory Density
67108864 bit
Boot Block
BOTTOM
Yayın Yılı
2015
Memory Size
64Mb 8M x 8 4M x 16
Terminal Sayısı
48
Alternate Memory Width
8
Tepe Reflow Süresi (maks. sn)
30
Memory Interface
Parallel
Gerilim
2.7V
JESD-609 Kodu
e3
Parça Durumu
Obsolete
Nem Hassasiyeti (MSL)
3 (168 Hours)
Kılıf / Paket
48-TFSOP (0.724, 18.40mm Width)
Besleme Gerilimi
3V
Pin Sayısı
48
Write Cycle Time Word Page
70ns
Kurşunsuz Kodu
yes
Tepe Reflow Sıcaklığı (°C)
260
Memory Width
16
Fonksiyon Sayısı
1
Memory Format
FLASH

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