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C3 ChipZentronix
M29DW323DB70ZE6E

Micron Technology Inc.

M29DW323DB70ZE6E

Memory

RoHS: Compliant

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RoHS

Compliant

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Specifications

ECCN Kodu
3A991.B.1.A
Power Supplies
3/3.3V
Memory Format
FLASH
Besleme Gerilimi
3V
HTS Kodu
8542.32.00.51
Number Of Sectorssize
863
Write Cycle Time Word Page
70ns
JESD-609 Kodu
e1
Gerilim
2.7V
Parça Durumu
Obsolete
Nem Hassasiyeti (MSL)
3 (168 Hours)
Common Flash Interface
YES
Terminal
SMD/SMT
Toggle Bit
YES
Memory Size
32Mb 4M x 8 2M x 16
Yayın Yılı
2004
Radyasyon Dayanımı
No
Sector Size
8K64K
Ambalaj
Tray
Genişlik
6mm
Density
32 Mb
Çalışma Sıcaklığı
-40°C~85°C TA
Terminal Kaplaması
Tin/Silver/Copper (Sn/Ag/Cu)
Organization
2MX16
RoHS Durumu
ROHS3 Compliant
Yüzey Montaj
YES
Readybusy
YES
Kurşunsuz Kodu
yes
Fonksiyon Sayısı
1
Pin Sayısı
48
Command User Interface
YES
Memory Width
16
Tepe Reflow Sıcaklığı (°C)
260
Pin Sayısı
48
Kılıf / Paket
48-TFBGA
Additional Feature
BOTTOM BOOT BLOCK
Nominal Supply Current
10mA
Data Polling
YES
Tepe Reflow Süresi (maks. sn)
30
Memory Interface
Parallel

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