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UMT1N-TP

Micro Commercial Co

UMT1N-TP

Arrays BJT Transistors

RoHS: Compliant

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RoHS

Compliant

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Specifications

Dc Current Gain Hfe Min Ic Vce
120 @ 1mA 6V
Nem Hassasiyeti (MSL)
1 (Unlimited)
Voltage Collector Emitter Breakdown Max
50V
Power Dissipationmax Abs
0.15W
Ambalaj
Cut Tape (CT)
Montaj Tipi
Surface Mount
Kurşunsuz Kodu
yes
Yüzey Montaj
YES
Current Collector Cutoff Max
100nA ICBO
Transistor Element Material
SILICON
ECCN Kodu
EAR99
Yayın Yılı
2004
Terminal Sayısı
6
Polaritychannel Type
PNP
Terminal Kaplaması
Matte Tin (Sn)
Qualification Status
Not Qualified
Transistor Type
2 PNP (Dual)
Vce Saturation Max Ib Ic
500mV @ 5mA, 50mA
JESD-609 Kodu
e3
Terminal Formu
GULL WING
Temel Parça No
UMT1N
Number Of Elements
2
Tepe Reflow Süresi (maks. sn)
10
Frequency Transition
140MHz
Fabrika Tedarik Süresi
12 Weeks
Currentcollector Ic Max
150mA
Transition Frequency
140MHz
Çalışma Sıcaklığı
-55°C~150°C TJ
Jesd30 Code
R-PDSO-G6
RoHS Durumu
ROHS3 Compliant
Power Max
150mW
Configuration
SEPARATE, 2 ELEMENTS
Parça Durumu
Active
Pin Sayısı
6
Tepe Reflow Sıcaklığı (°C)
260
Kılıf / Paket
6-TSSOP, SC-88, SOT-363

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