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Priced by quantity and lead time.
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Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Resistor Base R1
- 22k Ω
- Terminal Formu
- GULL WING
- Power Dissipationmax Abs
- 0.15W
- Polaritychannel Type
- NPN
- Operating Temperature Max
- 150°C
- Number Of Elements
- 2
- Voltage Collector Emitter Breakdown Max
- 50V
- Qualification Status
- Not Qualified
- JESD-609 Kodu
- e3
- Frequency Transition
- 250MHz
- Kılıf / Paket
- 6-TSSOP, SC-88, SOT-363
- Tepe Reflow Süresi (maks. sn)
- 10
- Transition Frequency
- 250MHz
- Current Collector Cutoff Max
- 500nA
- Fabrika Tedarik Süresi
- 12 Weeks
- Jesd30 Code
- R-PDSO-G6
- Parça Durumu
- Active
- Pin Sayısı
- 6
- Additional Feature
- BUILT-IN BIAS RESISTOR RATIO IS 1
- ECCN Kodu
- EAR99
- Resistor Emitter Base R2
- 22k Ω
- Ambalaj
- Cut Tape (CT)
- Vce Saturation Max Ib Ic
- 300mV @ 500μA, 10mA
- Montaj Tipi
- Surface Mount
- Yüzey Montaj
- YES
- RoHS Durumu
- ROHS3 Compliant
- Temel Parça No
- UMH1N
- Currentcollector Ic Max
- 100mA
- Transistor Type
- 2 NPN - Pre-Biased (Dual)
- Transistor Application
- SWITCHING
- Kurşunsuz Kodu
- yes
- Terminal Kaplaması
- Matte Tin (Sn)
- Configuration
- SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR
- Dc Current Gain Hfe Min Ic Vce
- 56 @ 5mA 5V
- Terminal Sayısı
- 6
- Tepe Reflow Sıcaklığı (°C)
- 260
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Yayın Yılı
- 2005
- Power Max
- 150mW
- Transistor Element Material
- SILICON
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