RB751S-40DP-TP

Specifications

Tepe Reflow Süresi (maks. sn)

10

RoHS Durumu

ROHS3 Compliant

Montaj Tipi

Surface Mount

Jesd30 Code

R-PBCC-N2

Nem Hassasiyeti (MSL)

1 (Unlimited)

Ambalaj

Tape & Reel (TR)

Operating Temperature Max

125°C

Power Dissipation Max

0.1W

Terminal Pozisyonu

BOTTOM

Operating Temperature Junction

125°C Max

Kılıf / Paket

0201 (0603 Metric)

Speed

Fast Recovery =< 500ns, > 200mA (Io)

Configuration

SINGLE

Parça Durumu

Active

Terminal Formu

NO LEAD

Diode Element Material

SILICON

Fabrika Tedarik Süresi

12 Weeks

Current Average Rectified Io

30mA

ECCN Kodu

EAR99

Voltage Dc Reverse Vr Max

40V

Yayın Yılı

2007

Diode Type

Schottky

Output Currentmax

0.03A

Yüzey Montaj

YES

Number Of Elements

1

Capacitance Vr F

2pF @ 1V 1MHz

Voltage Forward Vf Max If

370mV @ 1mA

Tepe Reflow Sıcaklığı (°C)

260

Current Reverse Leakage Vr

500nA @ 30V

Rep Pk Reverse Voltagemax

40V

Additional Feature

HIGH RELIABILITY

Terminal Sayısı

2