Volume pricing
- 1+ pcs$0.43
- 10+ pcs$0.40
- 100+ pcs$0.38
- 500+ pcs$0.36
Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Çalışma Sıcaklığı
- -55°C ~ 150°C (TJ)
- Transistor Type
- 2 PNP (Dual)
- Temel Ürün No
- MMDT3906
- Currentcollector Ic Max
- 200mA
- Power Max
- 200mW
- Configuration
- Dual
- Tedarikçi Cihaz Paketi
- SOT-363
- Vce Saturation Max Ib Ic
- 400mV @ 5mA, 50mA
- Collectoremitter Saturation Voltage
- 400 mV
- Collector Base Voltage Vcbo
- 40 V
- Dc Collectorbase Gain Hfe Min
- 30
- Transistor Polarity
- PNP
- Gain Bandwidth Product Ft
- 250 MHz
- Dc Current Gain Hfe Min Ic Vce
- 100 @ 10mA, 1V
- Kılıf / Paket
- 6-TSSOP, SC-88, SOT-363
- Minimum Operating Temperature
- - 55 C
- Collector Emitter Voltage Vceo Max
- 40 V
- Ürün Tipi
- BJTs - Bipolar Transistors
- Emitter Base Voltage Vebo
- 5 V
- Montaj Tipi
- Surface Mount
- Voltage Collector Emitter Breakdown Max
- 40V
- Ürün Durumu
- Active
- Pd Power Dissipation
- 200 mW
- Current Collector Cutoff Max
- 50nA (ICBO)
- Fabrika Paket Adedi
- 3000
- Dc Current Gain Hfe Max
- 300
- Frequency Transition
- 250MHz
- Seri
- AECQ-HE3
- Maks. Çalışma Sıcaklığı
- + 150 C
- Montaj Stili
- SMD/SMT
- Maximum Dc Collector Current
- 200 mA
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