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Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Configuration
- Dual
- Montaj Stili
- SMD/SMT
- Emitter Base Voltage Vebo
- 6 V
- Current Collector Cutoff Max
- 15nA (ICBO)
- Collector Base Voltage Vcbo
- 80 V
- Minimum Operating Temperature
- - 55 C
- Pd Power Dissipation
- 200 mW
- Dc Current Gain Hfe Min Ic Vce
- 200 @ 2mA, 5V
- Maks. Çalışma Sıcaklığı
- + 150 C
- Seri
- AECQ-HE3
- Temel Ürün No
- BC846
- Vce Saturation Max Ib Ic
- 300mV @ 5mA, 100mA
- Currentcollector Ic Max
- 100mA
- Ürün Tipi
- BJTs - Bipolar Transistors
- Tedarikçi Cihaz Paketi
- SOT-363
- Gain Bandwidth Product Ft
- 100 MHz
- Transistor Type
- 2 NPN (Dual)
- Maximum Dc Collector Current
- 100 mA
- Collectoremitter Saturation Voltage
- 850 mV
- Fabrika Paket Adedi
- 3000
- Montaj Tipi
- Surface Mount
- Transistor Polarity
- NPN
- Collector Emitter Voltage Vceo Max
- 65 V
- RoHS
- Details
- Dc Current Gain Hfe Max
- 450
- Çalışma Sıcaklığı
- -55°C ~ 150°C (TJ)
- Kılıf / Paket
- 6-TSSOP, SC-88, SOT-363
- Frequency Transition
- 100MHz
- Dc Collectorbase Gain Hfe Min
- 200
- Ambalaj
- Cut Tape
- Power Max
- 200mW
- Voltage Collector Emitter Breakdown Max
- 65V
- Ürün Durumu
- Active
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