BAS40-TP

Specifications

Terminal Pozisyonu

DUAL

Current Average Rectified Io

200mA DC

Diode Element Material

SILICON

Reverse Recovery Time

5ns

Operating Temperature Max

125°C

Rep Pk Reverse Voltagemax

40V

Temel Parça No

BAS40

Qualification Status

Not Qualified

Voltage Dc Reverse Vr Max

40V

Voltage Forward Vf Max If

1V @ 40mA

Parça Durumu

Active

Tepe Reflow Süresi (maks. sn)

10

Number Of Elements

1

Capacitance Vr F

5pF @ 0V 1MHz

RoHS Durumu

ROHS3 Compliant

Terminal Kaplaması

Matte Tin (Sn)

Tepe Reflow Sıcaklığı (°C)

260

Kılıf / Paket

TO-236-3, SC-59, SOT-23-3

Terminal Formu

GULL WING

Montaj Tipi

Surface Mount

HTS Kodu

8541.10.00.70

Fabrika Tedarik Süresi

12 Weeks

Yüzey Montaj

YES

Kurşunsuz Kodu

yes

Current Reverse Leakage Vr

200nA @ 30V

Output Currentmax

0.2A

Jesd30 Code

R-PDSO-G3

Speed

Small Signal =< 200mA (Io), Any Speed

Pin Sayısı

3

Ambalaj

Tape & Reel (TR)

Operating Temperature Junction

-55°C~125°C

Configuration

SINGLE

Nem Hassasiyeti (MSL)

1 (Unlimited)

ECCN Kodu

EAR99

JESD-609 Kodu

e3

Diode Type

Schottky

Power Dissipation Max

0.2W

Terminal Sayısı

3