UES1105E3

Specifications

Number Of Phases

1

Terminal Formu

WIRE

Additional Feature

HIGH SURGE CAPABILITY

Max Surge Current

20 A

Package Description

O-LALF-W2

Package Shape

ROUND

ECCN Kodu

EAR99

Diode Type

Standard

Configuration

Single

HTS Kodu

8541.10.00.80

Current Reverse Leakage Vr

10 μA @ 300 V

Reflow Temperaturemax S

NOT SPECIFIED

Applications

HIGH VOLTAGE

If Forward Current

1 A

Yüzey Montaj

NO

Minimum Operating Temperature

- 55 C

Operating Temperature Junction

-55°C ~ 150°C

Tedarikçi Cihaz Paketi

A, Axial

Reverse Recovery Time Trr

50 ns

Ürün Tipi

Rectifiers

Montaj Tipi

Through Hole

Power Dissipation Max

2.5 W

Fabrika Paket Adedi

1

Paket

Bulk

Part Life Cycle Code

Active

Diode Element Material

SILICON

Kılıf / Paket

Axial

Vr Reverse Voltage

300 V

Current Average Rectified Io

1A

Maks. Çalışma Sıcaklığı

+ 150 C

Ürün Durumu

Active

Montaj Stili

Through Hole

Nonrep Pk Forward Currentmax

20 A

Ihs Manufacturer

MICROSEMI CORP

Rohs Code

Yes

Package Style

LONG FORM

Voltage Dc Reverse Vr Max

300 V

REACH Uyumluluk Kodu

compliant

Case Connection

ISOLATED

Voltage Forward Vf Max If

1.25 V @ 1 A