TD9944TG-G

Specifications

Gate To Source Voltage Vgs

20V

Yayın Yılı

2013

Weight

84.99187mg

Tepe Reflow Sıcaklığı (°C)

260

Terminal Kaplaması

Matte Tin (Sn) - annealed

Turn On Delay Time

10 ns

Terminal Formu

GULL WING

Montaj Tipi

Surface Mount

Vgsth Max Id

2V @ 1mA

Montaj

Surface Mount

Nem Hassasiyeti (MSL)

1 (Unlimited)

Drain To Source Breakdown Voltage

240V

Configuration

SINGLE WITH BUILT-IN DIODE

Kurşunsuz

Lead Free

Terminal Sayısı

8

Ambalaj

Tape & Reel (TR)

Tepe Reflow Süresi (maks. sn)

40

Transistor Application

SWITCHING

Qualification Status

Not Qualified

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Çalışma Sıcaklığı

-55°C~150°C TJ

ECCN Kodu

EAR99

Number Of Elements

2

Kılıf / Paket

8-SOIC (0.154, 3.90mm Width)

Additional Feature

LOW THRESHOLD

Continuous Drain Current Id

1A

Fet Type

2 N-Channel (Dual)

Fabrika Tedarik Süresi

5 Weeks

Input Capacitance Ciss Max Vds

125pF @ 25V

JESD-609 Kodu

e3

Rds On Max Id Vgs

6 Ω @ 500mA, 10V

Number Of Channels

2

Drainsource On Resistancemax

6Ohm

Rise Time

10ns

Operating Mode

ENHANCEMENT MODE

Fall Time Typ

10 ns

RoHS Durumu

ROHS3 Compliant

Parça Durumu

Active

Transistor Element Material

SILICON

Turn Off Delay Time

20 ns