Volume pricing
- 1+ pcs$3.27
- 10+ pcs$3.08
- 100+ pcs$2.91
- 500+ pcs$2.74
Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Terminal Kaplaması
- Nickel/Palladium/Gold (Ni/Pd/Au)
- Fet Technology
- METAL-OXIDE SEMICONDUCTOR
- Tepe Reflow Süresi (maks. sn)
- 40
- Qualification Status
- Not Qualified
- Vgsth Max Id
- 2.4V @ 1mA
- Montaj Tipi
- Surface Mount
- RoHS Durumu
- ROHS3 Compliant
- Input Capacitance Ciss Max Vds
- 56pF @ 25V
- Transistor Element Material
- SILICON
- Pin Sayısı
- 12
- Ambalaj
- Tape & Reel (TR)
- Fet Feature
- Standard
- Nem Hassasiyeti (MSL)
- 2 (1 Year)
- Rds On Max Id Vgs
- 6 Ω @ 1A, 10V
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Transistor Application
- SWITCHING
- Terminal Pozisyonu
- DUAL
- Terminal Formu
- NO LEAD
- Fabrika Tedarik Süresi
- 3 Weeks
- Drain To Source Voltage Vdss
- 200V
- Kılıf / Paket
- 12-VFDFN Exposed Pad
- Operating Mode
- ENHANCEMENT MODE
- Configuration
- SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR
- Parça Durumu
- Active
- Yayın Yılı
- 2013
- Drainsource On Resistancemax
- 7Ohm
- JESD-609 Kodu
- e4
- Fet Type
- 2 N and 2 P-Channel
- ECCN Kodu
- EAR99
- Polaritychannel Type
- N-CHANNEL AND P-CHANNEL
- Number Of Elements
- 4
- Montaj
- Surface Mount
- Ds Breakdown Voltagemin
- 200V
- Additional Feature
- LOGIC LEVEL COMPATIBLE, LOW THRESHOLD
- Terminal Sayısı
- 12
- Tepe Reflow Sıcaklığı (°C)
- 260
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