Volume pricing
- 1+ pcs$10.15
- 10+ pcs$9.58
- 100+ pcs$9.03
- 500+ pcs$8.52
Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Fabrika Tedarik Süresi
- 20 Weeks
- Rise Time
- 15ns
- Terminal Formu
- NO LEAD
- Parça Durumu
- Active
- Configuration
- COMPLEX
- Kılıf / Paket
- 56-VFQFN Exposed Pad
- Drain To Source Voltage Vdss
- 200V
- Continuous Drain Current Id
- 3.2A
- Operating Mode
- ENHANCEMENT MODE
- Drainsource On Resistancemax
- 8Ohm
- Fall Time Typ
- 15 ns
- Yayın Yılı
- 2012
- Fet Type
- 6 N and 6 P-Channel
- Number Of Elements
- 6
- Polaritychannel Type
- N-CHANNEL AND P-CHANNEL
- Montaj
- Surface Mount
- Ds Breakdown Voltagemin
- 200V
- Terminal Sayısı
- 56
- Number Of Channels
- 12
- Fet Technology
- METAL-OXIDE SEMICONDUCTOR
- Vgsth Max Id
- 2.4V @ 1mA
- Weight
- 191.387631mg
- Kurşunsuz Kodu
- yes
- Transistor Element Material
- SILICON
- Input Capacitance Ciss Max Vds
- 50pF @ 25V
- RoHS Durumu
- ROHS3 Compliant
- Turn Off Delay Time
- 20 ns
- Montaj Tipi
- Surface Mount
- Ambalaj
- Tape & Reel (TR)
- Fet Feature
- Standard
- Nem Hassasiyeti (MSL)
- 3 (168 Hours)
- Transistor Application
- SWITCHING
- Rds On Max Id Vgs
- 8 Ω @ 1A, 10V
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Terminal Pozisyonu
- QUAD
- Turn On Delay Time
- 10 ns
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