TC6321T-V/9U

Specifications

Ambalaj

Tape & Reel (TR)

Configuration

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR

Kılıf / Paket

8-VDFN Exposed Pad

RoHS Durumu

ROHS3 Compliant

Nem Hassasiyeti (MSL)

1 (Unlimited)

Transistor Element Material

SILICON

Parça Durumu

Active

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Fabrika Tedarik Süresi

7 Weeks

Reference Standard

TS 16949

Vgsth Max Id

2V @ 1mA, 2.4V @ 1mA

Fet Type

N and P-Channel

Drain To Source Voltage Vdss

200V

Polaritychannel Type

N-CHANNEL AND P-CHANNEL

Montaj Tipi

Surface Mount

Terminal Formu

NO LEAD

Drainsource On Resistancemax

7Ohm

Jesd30 Code

R-PDSO-N8

Yüzey Montaj

YES

Rds On Max Id Vgs

7 Ω @ 1A, 10V, 8 Ω @ 1A, 10V

Ds Breakdown Voltagemin

200V

Çalışma Sıcaklığı

-55°C~175°C

Terminal Sayısı

8

Terminal Pozisyonu

DUAL

Number Of Elements

2

Transistor Application

SWITCHING

Case Connection

DRAIN

Fet Feature

Logic Level Gate

Input Capacitance Ciss Max Vds

110pF @ 25V 200pF @ 25V

Current Continuous Drain Id25

2A Ta

Operating Mode

ENHANCEMENT MODE