TC6215TG-G

Specifications

Operating Mode

ENHANCEMENT MODE

Turn On Delay Time

2.5 ns

Fet Feature

Standard

Input Capacitance Ciss Max Vds

120pF @ 25V

Transistor Application

SWITCHING

Number Of Elements

2

Terminal Kaplaması

Matte Tin (Sn) - annealed

Terminal Sayısı

8

Çalışma Sıcaklığı

-55°C~150°C TJ

Rds On Max Id Vgs

4 Ω @ 2A, 10V

Turn Off Delay Time

17.2 ns

Tepe Reflow Sıcaklığı (°C)

260

Gate To Source Voltage Vgs

20V

Drainsource On Resistancemax

5Ohm

Pin Sayısı

8

Fall Time Typ

11.3 ns

Terminal Formu

GULL WING

Temel Parça No

TC621

Montaj Tipi

Surface Mount

Montaj

Surface Mount

JESD-609 Kodu

e3

Weight

84.99187mg

Polaritychannel Type

N-CHANNEL AND P-CHANNEL

Drain To Source Voltage Vdss

150V

Drain To Source Breakdown Voltage

-150V

Yayın Yılı

2008

Fet Type

N and P-Channel

Rise Time

2.3ns

Number Of Channels

2

Vgsth Max Id

2V @ 1mA

Uzunluk

4.9mm

Yükseklik

1.65mm

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Fabrika Tedarik Süresi

6 Weeks

Parça Durumu

Active

Nem Hassasiyeti (MSL)

1 (Unlimited)

Tepe Reflow Süresi (maks. sn)

40

Transistor Element Material

SILICON

Qualification Status

Not Qualified

RoHS Durumu

ROHS3 Compliant